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应用扫描探针显微镜(SPM)技术实现了氧化物阻变薄膜局部区域高低阻态的互相转变。通过电激励、编程和擦除等操作,控制细丝的产生和断裂,实现了阻变薄膜局域的重复编程/擦除操作。用该方法分别研究了氧空位机制与金属导电细丝机制的氧化物薄膜的阻变特性,对两种机制做了对比研究。结果表明:在阻变存储器(RRAM)中氧空位机制在导电细丝和数据密度方面要高于金属细丝机制。同时,金属细丝机制阻变薄膜部分区域因编程/擦除操作发生了永久性形貌变化,可能对阻变器件的电极产生永久性破坏,这说明氧空位机制阻变薄膜在未来的高密度存储上具有较好的应用前景。
The scanning electron microscopy (SPM) technique was used to realize the mutual resistance of the high and low resistance states in the local area of the resistive film. Through the electrical excitation, programming and erasing and other operations, control filament production and fracture, to achieve a resistive film local repeated programming / erase operation. This method is used to study the resistance change characteristics of oxygen vacancies and oxide thin films of metallic conductive filaments respectively. The two mechanisms are compared. The results show that oxygen vacancy mechanism in RRAM is higher than that of metal filaments in terms of conductive filaments and data density. At the same time, the part of the resistive thin film in the metal filament mechanism undergoes a permanent morphological change due to the programming / erasing operation, which may cause permanent damage to the electrodes of the resistive device. This shows that the oxygen vacancy mechanism resistive thin film has a high density in the future Storage has a good application prospects.