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采用Ar+离子溅射方法将300nmSnO2薄膜沉积在Si片上．分别对膜层进行60keV，5×10(16)cm(-2)Mg+离子注入和100keV，5×10(16)cm(－2)Nb+离子注入．对未注入、Mg+离子注入、Nb+离子注入3种薄膜进行500℃，4h退火处理．采用XRD和XPS手段分析膜层，发现Mg+离子注入对SnO2纳米晶有稳定化作用．
A 300 nm SnO2 thin film was deposited on the Si wafer by Ar + ion sputtering. The films were implanted with 60keV, 5 × 10 (16) cm (-2) Mg + ions and 100 keV, 5 × 10 (16) cm (-2) Nb + ions, respectively. The three kinds of films without injection, Mg + ion implantation and Nb + ion implantation were annealed at 500 ℃ for 4h. The films were analyzed by XRD and XPS, and it was found that Mg + ions could stabilize SnO2 nanocrystals.