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研究了离子损伤对等离子体辅助分子束外延生长的 Ga NAs/ Ga As和 Ga In NAs/ Ga As量子阱的影响 .研究表明离子损伤是影响 Ga NAs和 Ga In NAs量子阱质量的关键因素 .去离子磁场能有效地去除了等离子体活化产生的氮离子 .对于使用去离子磁场生长的 Ga NAs和 Ga In NAs量子阱样品 ,X射线衍射测量和 PL 谱测量都表明样品的质量被显著地提高 .Ga In As量子阱的 PL 强度已经提高到可以和同样条件下生长的 Ga In As量子阱相比较 .研究也表明使用的磁场强度越强 ,样品的光学质量提高越明显
The effects of ion damage on Ga NAs / Ga As and Ga In NAs / GaAs quantum wells grown by plasma assisted molecular beam epitaxy have been studied. The results show that ion damage is a key factor affecting the quality of Ga NAs and Ga In NAs quantum wells. The ion magnetic field can effectively remove the nitrogen ions generated by plasma activation.For both Ga NAs and Ga In NAs quantum well samples grown using deionized magnetic field, both the X-ray diffraction measurement and the PL spectrum measurement show that the quality of the sample is significantly improved. The PL intensity of the GaInAs quantum well has been increased to comparable GaInAs quantum wells grown under the same conditions.The study also showed that the stronger the magnetic field strength used, the more significant the optical quality enhancement of the sample