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用砷化镓肖特基势垒场效应管(GaAs FET)做低噪声放大器,能改进目前微波接收机的性能。本文介绍GaAs FET的特性和设计考虑,以及各种型号的低噪声GaAs FET放大器的性能。这些放大器工作于1～12千兆赫频段上。现已在国外研制成功,它们可分别应用于视距微波通信系统,超视距的散射通信系统以及卫星通信地面站中。
Using a gallium arsenide Schottky barrier FET (GaAs FET) as a low noise amplifier can improve the performance of current microwave receivers. This article describes the features and design considerations of GaAs FETs, as well as the performance of various models of low-noise GaAs FET amplifiers. These amplifiers work in the 1-12 GHz band. Has been successfully developed abroad, they can be applied to line of sight microwave communication systems, beyond the horizon of the scattering communication systems and satellite communications ground station.