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采用离子注入技术将Zn离子注入Si(001)基片,并在大气环境下加热氧化制备了ZnO纳米团簇.利用电子探针、薄膜X射线衍射仪、原子力显微镜和透射电子显微镜,对注入和热氧化后的薄膜成分、表面形貌和微观结构进行表征,探讨了热氧化温度以及注入剂量对纳米ZnO团簇的成核过程及生长行为的影响.结果表明,Zn离子注入到Si基片表面后形成了Zn纳米团簇,热氧化过程中Zn离子向表面扩散,在表面SiO2非晶层和Si基片多晶区的界面处形成纳米团簇.热氧化温度是影响ZnO纳米团簇结晶质量的一个重要参数.随着热氧化温度的升高,金属Zn的衍射峰强度逐渐变弱并消失,而ZnO的(101)衍射峰强度逐渐增强.当热氧化温度高于800℃以后,ZnO与SiO2之间开始发生化学反应形成Zn2SiO4.
ZnO nanoclusters were prepared by implanting Zn ions into the Si (001) substrate by ion implantation and heating and oxidizing under atmospheric conditions. The effects of implantation and recombination on the growth of ZnO nanoclusters were investigated by electron probe, X-ray diffraction, atomic force microscopy and transmission electron microscopy The effects of thermal oxidation temperature and implantation dose on the nucleation process and growth behavior of ZnO nanoclusters were investigated. The results show that Zn ions are implanted into the surface of Si substrate Zn nanoclusters were formed, and Zn ions diffused to the surface during the thermal oxidation process, forming nanoclusters at the interface between the amorphous surface of Si02 and the polycrystalline region of Si substrate.The thermal oxidation temperature affected the crystal quality of ZnO nanoclusters As the thermal oxidation temperature increases, the diffraction peak intensity of metal Zn becomes weaker and disappears gradually, while the intensity of (101) diffraction peak of ZnO gradually increases.When the thermal oxidation temperature is higher than 800 ℃, ZnO and SiO2 began to react chemically to form Zn2SiO4.