一、概述金属—氧化物—半导体场效应晶体管(MOSFET)发展至今似乎在单管的应用方面并不象先前所预料的那样广泛。原因之一,大概是可靠性(如栅击穿)未能得到彻底解决之故。但这一问题,在集成电路中并不突出。因为集成电路中能对输入端栅开路的器件,设计制作有效的保护系统。由于在集成电路中除输入端之器件的栅极悬空外,其余所有的器件之栅极都处于闭合回路之中,不易受外界电场的干扰。所以对MOS集成电 I. Overview Metal-oxide-semiconductor field-effect transistors (MOSFETs) have so far seemed to be not as widely used as previously anticipated for single-tube applications. One of the reasons, probably reliability (such as grid breakdown) has not been completely solved. However, this issue is not prominent in integrated circuits. Because the integrated circuit can be open to the input gate of the device, the design of effective protection system. Since the gates of the devices except for the inputs in the integrated circuit are left open, the gates of all other devices are in a closed loop and are not easily disturbed by external electric fields. So integrated MOS