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针对传统快速热处理工艺(RTP)在退火过程中引起杂质再扩散导致难以制作浅结器件的问题,采用了微波退火的方式进行退火,有效降低了热预算,能够解决杂质再扩散的问题。相比传统RTP退火,微波的退火机理具有特殊性,其不仅有微波的热效应还有微波的非热效应,使微波退火能够在较低的温度下实现杂质激活和晶格修复。实验表明,在注入能量为15 keV、注入剂量为1×1015 cm-2时,P31注入的样品经微波退火后其方块电阻均值小于200Ω/,片内不均匀度小于3%,最高退火温度仅约为400℃,热预算远低于传统RTP退火。该实验结果表明,微波退火的方法在浅结器件的制备工艺中有较大的应用潜力。
In order to solve the problem that the traditional rapid thermal process (RTP) causes the diffusion of impurities in the annealing process to make it difficult to fabricate the shallow junction device, the microwave annealing method is adopted for annealing, which effectively reduces the thermal budget and can solve the problem of impurity re-diffusion. Compared with the traditional RTP annealing, the microwave annealing mechanism has its own particularity. It not only has the microwave thermal effect but also has the microwave non-thermal effect, which makes the microwave annealing realize impurity activation and lattice repair at a lower temperature. The experimental results show that the mean square resistance of the samples injected by P31 after microwave implantation is less than 200Ω / at an energy of 15 keV and an implantation dose of 1 × 10 15 cm-2, the on-chip non-uniformity is less than 3%, and the maximum annealing temperature is only About 400 ℃, the thermal budget is much lower than traditional RTP annealing. The experimental results show that the microwave annealing method in the preparation of shallow junction devices have greater potential applications.