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本文第一部份综述有关文献并评价各类二氧化硅和磷硅玻璃湿法化学腐蚀的化学原理、腐蚀机理和腐蚀工艺;第二部分讨论因腐蚀而引起的诱生缺陷。业已证实,玻璃膜复盖层经湿法化学腐蚀之后在集成电路芯片上零散出现的结晶形结构物与氟化铵晶体是一样的。当芯片侵入缓冲氢氟酸腐蚀剂过饱和溶液中时,在玻璃膜或氧化物表面上很快就形成氯化物结晶体。于是,在残余介质腐蚀的过程中,它们就作为一种掩蔽物而引起明显的仿形结晶结构。如果这些缺陷密度高,由于出砚表面问题和/或引线联结问题而可能需要返工或者报废整批器件芯片。设法防止腐蚀剂变冷或者变得太浓,或者使用低浓度腐蚀剂成分,均可避免溶液的过饱和问题。
The first part of this article reviews the literature and evaluates the chemical principles, corrosion mechanisms and corrosion processes of wet chemical etching of various types of silica and phosphosilicate glass. The second part discusses the induced defects caused by corrosion. It has been confirmed that the crystalline structure of the glass film coating scattered on the integrated circuit chip after wet chemical etching is the same as the ammonium fluoride crystal. When the chip invades a supersaturated solution of buffered hydrofluoric acid etchant, chloride crystals rapidly form on the glass film or oxide surface. Thus, during the etching of the residual medium, they act as a mask causing a noticeable conformational crystal structure. If these defect densities are high, the entire batch of device chips may need to be reworked or scrapped due to inkjet surface problems and / or lead bonding issues. Trying to prevent the etchant from getting too cold or getting too strong, or using low concentrations of etchant ingredients, avoids the problem of supersaturation of the solution.