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介绍了L波段300 W宽带硅微波脉冲大功率晶体管研制结果。采用大面积亚微米精细线条阵列加工技术、深亚微米浅结制备工艺技术、均匀热分布技术、双层金属化技术等工艺技术,研制出了L波段300 W宽带硅微波脉冲大功率晶体管。器件在1.2~1.4 GHz频带内,脉冲宽度150μs,占空比10%,工作电压40 V条件下,全频带内输出功率大于300 W,功率增益大于8.75 dB,集电极效率大于55%,并具有良好的可靠性。
The development of L band 300 W broadband silicon microwave pulse high power transistor is introduced. The L-band 300 W broadband microwave microwave power transistor has been developed by using large-area sub-micron fine line array processing technology, deep sub-micron shallow junction preparation technology, even heat distribution technology and double-layer metallization technology. In the frequency band of 1.2 ~ 1.4 GHz, the pulse width is 150μs, the duty cycle is 10%, the output power is more than 300 W, the power gain is more than 8.75 dB, the collector efficiency is more than 55% under the operating voltage of 40 V, Good reliability.