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引言众所周知,氮化硅可以极好地保护硅半导体器件不受离子沾污。而为了充分利用这一优点,还必须使氮化硅复盖在接触窗口的氧化层边缘以阻止沾污通过氧化层横向迁移。调节这种复盖要以增加微小器件的接触面积为代价,不管怎样,为了使器件面积的增加,减至最小且要实现复盖,通常氮化硅接触切面要极其致密,并严格对准。本文描述了一种适应这些要求,且能有效地防止离子沾污的技术。用阳极氧化氮化硅可以容易地在预先掩蔽和腐蚀的二氧化硅上沉积氮化硅接触切
Introduction It is well known that silicon nitride protects silicon semiconductor devices from ionic contamination. To take full advantage of this advantage, it is also necessary to cover the edge of the oxide layer of the contact window with silicon nitride to prevent contamination from migrating laterally through the oxide layer. Adjustments to this cover should be made at the expense of increasing the contact area of the tiny device. In any case, to minimize the area of the device and to achieve coverage, the contact surface of the silicon nitride is typically extremely dense and well-aligned. This article describes a technique that meets these requirements and effectively prevents ionic contamination. Silicon nitride can be easily deposited on pre-masked and etched silicon dioxide by anodic oxidation of silicon nitride