Design of ultralow power receiver front-ends for 2.4 GHz wireless sensor network applications

来源 :Journal of Semiconductors | 被引量 : 0次 | 上传用户:puppy_tang
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This paper presents the design of an ultralow power receiver front-end designed for a wireless sensor network(WSN) in a 0.18 m CMOS process. The author designs two front-ends working in the saturation region andthesubthresholdregionrespectively.Thefront-endscontainatwo-stagecross-couplingcascadedcommon-gate(CG) LNA and a quadrature Gilbert IQ mixer. The measured conversion gain is variable with high gain at 24 dB and low gain at 7 dB for the saturation one, and high gain at 22 dB and low gain at 5 dB for the subthreshold one.The noise figure(NF) at high gain mode is 5.1 dB and 6.3 dB for each. The input 1 dB compression point(IP1dB)at low gain mode is about 6 dBm and 3 dBm for each. The front-ends consume about 2.1 mA current from1.8 V power supply for the saturation one and 1.3 mA current for the subthreshold one. The measured results show that, comparing with the power consumption saving, it is worth making sacrifices on the performance for using the subthreshold technology. This paper presents the design of an ultralow power receiver front-end designed for a wireless sensor network (WSN) in a 0.18 m CMOS process. The author designs two front-ends working in the saturation region and thresholds regiosely. The front-endscontainatwo-stage cross-couplingcascadedcommon The measured conversion gain is variable with high gain at 24 dB and low gain at 7 dB for the saturation one, and high gain at 22 dB and low gain at 5 dB for the subthreshold one. The noise figure (NF) at high gain mode is 5.1 dB and 6.3 dB for each. The input 1 dB compression point (IP1dB) at low gain mode is about 6 dBm and 3 dBm for each. about 2.1 mA current from1.8 V power supply for the saturation one and 1.3 mA current for the subthreshold one. The measured results show that, comparing with the power consumption saving, it is worth making sacrifices on the performance for using the subthreshold technology.
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