随着LSI、大功率器件、红外探测器等器件的发展,元件制造技术的提高,对Si材料提出了愈来愈高的质量要求,尤其是Si材料中的微量杂质,因为它的含量及其浓度分布直接影响元件的性能与成品率,所以对杂质含量的分析显得十分重要。测定杂质分布最常用的手段是先测定电阻率,再根据Irvin曲线求出载流子浓度|N_o-N_A|,但这种方法不能测出 With the development of devices such as LSIs, high-power devices, infrared detectors and the improvement of component manufacturing technology, higher and higher quality requirements are put forward for Si materials, especially trace impurities in Si materials because of its content and its Concentration distribution directly affects the performance of components and yield, so the analysis of impurity content is very important. The most commonly used method to determine the impurity distribution is to determine the resistivity first, and then calculate the carrier concentration | N_o-N_A | from the Irvin curve, but this method can not measure