本文用TP-83型椭圆仪给出了硅器件工艺的若干重要数据:如硅片清洗后不同烘干方法的自然氧化层厚度;二氧化硅及其掺磷时的浓度与工艺条件对膜层折射率的影响等.文中用测量数据证明了在200A以内薄层时,取近Brewster角为方位角可以提高测量精度.最后还介绍了用TP-83椭圆仪可以同时输入两组不同角度的(?)、△值,而得到膜层的绝对厚度. In this paper, the TP-83-type ellipsometer is given a number of important silicon process technology data: such as silicon wafer drying method after drying the natural oxide thickness; silicon dioxide and phosphorus concentration and process conditions on the film The influence of refractive index, etc .. In this paper, the measurement data prove that when the layer is within 200A, taking the Brewster angle as the azimuth can improve the measuring accuracy.Finally, we also introduce the TP-83 ellipsometer can input two groups of different angle ?), △ value, and get the absolute thickness of the film.