该文测量了电应力作用下栅介质膜中陷阱电荷积累、以及在撤除应力后陷阱电荷减少的规律，在此基础上提出了解释脉冲应力下栅介质膜击穿寿命的模型。并对样品在直流电压与脉冲电压下的击穿寿命进行测量比较，发现随着脉冲频率的增加，栅介质膜击穿寿命增加，实验结果与模型预期的相符 In this paper, the trap charge accumulation in the gate dielectric film under electric stress and the trap charge reduction after the stress is removed are measured. Based on this, a model to explain the breakdown dielectric lifetime of the gate dielectric film under impulsive stress is proposed. The dielectric breakdown voltage of the gate dielectric film is measured and compared with that of the sample under the condition of the DC voltage and the pulse voltage. It is found that the breakdown life of the gate dielectric film increases as the pulse frequency increases.