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为了拓展KrF光刻在小于 1 80nm的SIA设计规则技术阶段的制造能力 ,需要一种最大 0 7NA透镜的远紫外步进扫描曝光系统来提供足够的工艺容限。面临着SIA的 1 5 0nm设计规则技术阶段 ,采用 2 48nm光刻的制造难题包括接触孔复印 ,疏密图形偏差控制以及可满足全视场CD的均匀性。所有这些均得益于更大数值孔径的透镜。论述了在一台PAS5 5 0 0 / 70 0B远紫外步进扫描系统中取得的实验结果。该机的设计是在PAS5 5 0 0 / 5 0 0机的基础上 ,采用一种新的 0 7NAStarlithTM透镜、AERIALTMⅡ型照明系统和先进的ATHENA对准系统组成。得出了 1 80nm和 1 5 0nm以及更小尺寸的密集和单线条图形、1 80nm和 1 6 0nm接触孔图形的成像结果。除成像性能外 ,还得出了像平面偏差 ,系统畸变标记、单机套刻和多机套刻结果。对于ATHENA对准系统、对准重复性以及在CMP加工后的片子上的套刻结果也给予展示。这种曝光设备可提供 1 5 0nm设计规划技术阶段批量生产要求的成像能力和套刻性能 ,并具有应用于更小设计规则研究与开发的潜力
In order to extend the manufacturing capability of KrF lithography in the SIA design rule technology stage of less than 180 nm, a far-flung step scanning exposure system with a maximum of 0 7 NA lens is required to provide a sufficient process margin. Faced with SIA’s 150nm design rule technology phase, manufacturing challenges with 2 48nm lithography include contact hole copying, density pattern control, and full-field CD uniformity. All of this is due to the larger numerical aperture lens. The experimental results obtained in a PAS5 500/70 0B far UV scanning system are discussed. The aircraft was designed on the basis of the PAS5 500/500 machine using a new 0 7 NA Starlith lens, an AERIAL II lighting system and an advanced ATHENA alignment system. The results of imaging of the dense and single line patterns of 180 nm and 150 nm and smaller sizes and the pattern of contact holes at 180 nm and 160 nm were obtained. In addition to imaging performance, but also came out as the image plane deviation, system distortion markers, single set of engraving and multi-machine engraved results. For the ATHENA alignment system, the alignment repeatability and the overlay results on the CMP machined film were also demonstrated. This exposure device provides the imaging capabilities and over-set performance required for mass production of the 150 nm design planning stage and has the potential to be applied to research and development of smaller design rules