论文部分内容阅读
本文简要阐述了近红外场助光阴极的原理及对外延材料的要求。利用液相外延工艺并采用独特的掺杂技术生长出了用于近红外光电阴极的InP/InGaAsP 异质结结构。显微分析。x射线双晶衍射、电子探针、电化学C-V等测试结果表明外延层的结晶质量及电学性能符合设计的特殊要求,在此基础上制作的场助光电阴极量子效率在1.20μm处为3.5×10~(-4),其响应波长可达1.25μm。
This article briefly describes the principle of near-infrared field-assisted cathode and the requirements for epitaxial materials. The InP / InGaAsP heterojunction structure for the near-infrared photocathode has been grown by liquid-phase epitaxy and using unique doping techniques. Microanalysis. The results of X-ray double crystal diffraction, electron probe and electrochemical CV show that the crystalline quality and electrical properties of the epitaxial layer accord with the special requirements of the design. Based on this, the field-assisted photocathode quantum efficiency of the photocathode is 3.5 × 10 ~ (-4), the response wavelength up to 1.25μm.