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研究了铁电薄膜红外探测器响应率等器件参数随铁电薄膜厚度的变化.器件的隔热层结构采用气凝胶二氧化硅.实验发现器件的热释电系数,吸收率以及热导均随膜厚增加而增加.铁电膜层厚度为240nm的器件,其热导与微桥结构器件的热导相近,都为10-7W/K量级,证明气凝胶二氧化硅做隔热层能够制备出性能优良的热释电红外探测器.随着薄膜厚度增加,热导急剧增大,这是引起器件响应率降低的原因.制备铁电薄膜过程中的多次650°高温退火可能降低了二氧化硅多孔率.
The ferroelectric thin film infrared detector response rate and other device parameters with the ferroelectric thin film thickness changes.Insulating layer structure of the device using airgel silica.Experiments found that the device pyroelectric coefficient, absorption rate and thermal conductivity are With the increase of the film thickness.The ferroelectric film thickness of 240nm device, its thermal conductivity and micro-bridge structure of the thermal conductivity are similar, are 10-7W / K order, to prove airgel silica insulation Layer pyrolytic infrared detector can be prepared with excellent performance.With the increase of the thickness of the film, the thermal conductivity increases sharply, which is caused by the decrease of the device response rate.The preparation of ferroelectric thin films in the process of multiple 650 ° high temperature annealing may Reduced silica porosity.