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以扫描探针显微镜(SPM)为基础的超高密度信息存储是近年来信息存储领域的热点研究之一. 其基本原理是利用SPM针尖诱导存储介质表面形貌变化、导电性质改变、电荷分离等来记录信息. 提出利用STM隧道电流的焦耳热效应诱导材料发生气化分解的热化学烧孔模式的STM存储新原理, 并在电荷转移复合物TEA(TCNQ)2上成功地得到大面积信息孔阵列. 空洞大小均一, 最小直径约8 nm. 该存储模式有明显的优点: 由于STM隧道电流波及范围很小, 只要存储材料的导热性不是很好, 则气化分解局限于非常小的范围, 从原理上保证了存储的超高密度; 写入可靠率非常高, 达到99%以上; 存储材料具有可设计性, 易于优化材料的存储性能.
The ultra-high-density information storage based on the scanning probe microscope (SPM) is one of the hot topics in the field of information storage in recent years.The basic principle is to use the SPM tip to induce changes in the surface morphology of the storage medium, changes in the conductivity, charge separation, etc. To record the information.This paper proposes a new STM principle for the thermal chemical hole burning mode that induces gasification and decomposition of material by the Joule heating effect of STM tunneling current and successfully obtains a large area information hole array on the charge transfer complex TEA (TCNQ) 2 . Holes are uniform in size with a minimum diameter of about 8 nm. This storage model has the obvious advantage that due to the small sweep of the STM tunneling current, as long as the thermal conductivity of the storage material is not very good, the gasification decomposition is limited to very small ranges from In principle, the ultra-high density of the memory is guaranteed; the write reliability is very high, reaching more than 99%; the memory material is designed to easily optimize the storage performance of the material.