采用了以100％的氧作为溅射介质的射频平面磁控溅射技术制备了PZT铁电薄膜。报导了生长条件,如衬底温度,溅射气体组份和溅射气压,对溅射速率,介电常数和直流电导率的影响。化学计量受靶的组分控制。沉积后薄膜的退火使所有的物理参数均有改善。在350℃附近清楚的介电相变和方形的极化磁滞回线证实了PZT膜的铁电性。 A PZT ferroelectric thin film was fabricated by RF planar magnetron sputtering with 100% oxygen as the sputtering medium. The effects of growth conditions, such as substrate temperature, sputter gas composition and sputtering pressure, on sputter rate, dielectric constant and DC conductivity are reported. Stoichiometry is controlled by the components of the target. Annealing of the deposited film improves all physical parameters. The clear dielectric phase transition near 350 ° C and the square polarization hysteresis loop confirm the ferroelectricity of the PZT film.