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引言多年来,单块集成电路主要是由双极型和MOS 型两大类型分别发展起来的。由于它们各自有其优点而互相竞争和发展,然而,在某些电路,尤其在线性集成电路方面,它们还不能单独满足多功能、高性能等新的指标要求。自七十年代初,人们开始研究在同一硅片上同时制造双极器件和MOS 器件,合理地利用两种器件的功能和特点以实现仅用一类器件所达不到的高性能、高集成度、高可靠性固体电路结构。例如,1970年Link 等在同一硅片上实现了互补MOS-互补双极的数
INTRODUCTION Over the years, a monolithic integrated circuit has been developed mainly by bipolar and MOS types. Because they each have their own advantages and compete with each other, however, in some circuits, especially in the linear integrated circuits, they can not alone meet the multi-functional, high performance and other new indicators. Since the early 1970s, people began to study the fabrication of bipolar devices and MOS devices on the same silicon wafer at the same time, and reasonably utilize the functions and characteristics of the two devices in order to achieve high performance and high integration that can not be achieved with only one type of device Degree, high reliability Solid circuit structure. For example, Link et al. In 1970 realized the number of complementary MOS-complementary bipoles on the same silicon