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本工作测量了反应堆脉冲中子、γ辐照SiGeHBT典型直流电参数和退火因子。在反应堆1×10~(13)cm-2的脉冲中子注量和257Gy(Si)γ总剂量辐照后,SiGeHBT静态共射极直流增益减小了20%。辐照后基极电流、结漏电流增大,集电极电流、击穿电压减小。初步分析了SiGeHBT瞬态中子、γ辐射损伤机理。
This work measured the reactor pulse neutron, γ-irradiated SiGeHBT typical DC parameters and annealing factor. After pulsed neutron fluence of 1 × 10 ~ (13) cm-2 and total dose of 257Gy (Si) γ, the direct-current gain of SiGeHBT static emitter decreased by 20%. Base current after irradiation, junction leakage current increases, the collector current, breakdown voltage decreases. The mechanism of transient neutron and γ radiation damage of SiGeHBT was analyzed preliminarily.