霍尔效应是著名物理效应之一。通过该效应中霍尔系数等测定,将提供半导体材料及红外器件材料性能研究的手段。由霍尔系数测定可确定材料的载流子浓度、迁移率、杂质电离能以及禁带宽度,尤其低温液氦下霍尔系数的测定,可反映材料性能的好坏,有利于红外器件的 Hall effect is one of the famous physical effects. Through the determination of Hall effect coefficient, etc., will provide semiconductor materials and infrared device material properties of the means. The determination of Hall coefficient can determine the carrier concentration, mobility, impurity ionization energy and the forbidden band width, especially the determination of Hall coefficient under low temperature liquid helium, which can reflect the performance of the material and is good for the infrared device