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基于磁中性环路放电(NLD)等离子体刻蚀机的原理,研究了Ar和C_4F_8混合气体氛围下,射频(RF)天线功率、偏置电源功率、气压和C4F8体积流量等工艺参数对NLD刻蚀石英的影响,最终获取优化的工艺参数,用于高深宽比石英结构的制备。结果表明,随着RF天线功率的增加,石英刻蚀速率逐渐降低,偏压不断减小;增加偏置电源功率,刻蚀速率及偏压持续增大,刻蚀比不断增大;随着反应压强的增加,偏压变大,而刻蚀速率一直降低;C_4F_8体积流量增加,偏压一直增大,石英刻蚀速率先是快速上升而后逐渐变小。在优化的工艺参数下,刻蚀速率为439 nm/min,深宽比可以达到10∶1。
Based on the principle of magnetic neutral loop discharge (NLD) plasma etching machine, the effects of process parameters such as RF antenna power, bias power, air pressure and C4F8 volume flow on the performance of NLD The impact of quartz etching, the final access to optimized process parameters for the preparation of high aspect ratio quartz structure. The results show that with the increase of RF antenna power, the etching rate of quartz decreases and the bias voltage decreases. With the increase of bias power, the etching rate and bias voltage continue to increase, and the etching ratio increases. With the increase of RF antenna power, As the pressure increases, the bias voltage increases and the etching rate decreases. The volume flow rate of C_4F_8 increases and the bias voltage increases. The quartz etching rate firstly increases rapidly and then decreases gradually. Under optimized process parameters, the etch rate is 439 nm / min and the aspect ratio can reach 10: 1.