论文部分内容阅读
引言 我们与北京电子管厂共同研制的400兆赫20瓦,1千兆10瓦的晶体管,在1974年作出样管的基础上,现在继续小批量生产。这种管子目前主要用在航空电台、微波中继通讯,经使用单位鉴定,电性能基本上达到要求。目前,该产品存在的主要问题是易烧毁。 为了提高管子抗烧能力,在制管工艺中一般都采用发射极镇流电阻。 通常采用Ni-Cr电阻、Pt-Si电阻,但镇流效果不理想,为进一步提高管子二次击穿性能,准备采用掺杂多晶做纵向分立镇流电阻。本专题工作是为此目的而开展的。
INTRODUCTION The 400-megahertz 20-watt, 1-gigawatt 10-watt transistor jointly developed by our company and the Beijing Electronic Tube Factory, based on a sample tube made in 1974, is now continuing in small series. This pipe is currently mainly used in aviation stations, microwave relay communications, appraisal by the use of units, electrical performance basically meet the requirements. At present, the main problem of the product is easy to burn. In order to improve the tube anti-burning ability, in the pipe manufacturing process are generally used emitter ballast resistance. Usually Ni-Cr resistance, Pt-Si resistance, but the ballast effect is not satisfactory, in order to further improve the tube secondary breakdown performance, prepared to do with discrete polycrystalline vertical discrete resistors. This thematic work is carried out for this purpose.