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采用数值计算方法分析了GaAsGa1-xAlxAs半导体量子阱的光辐射热离子制冷.以漂移扩散模型为基础,通过电流连续性方程和泊松方程自洽地计算出在外加正向偏压的条件下半导体内部的载流子分布情况,并在此基础上计算了阱内载流子的发光复合和俄歇复合,从而确定了半导体异质结量子阱光辐射热离子制冷的最优条件.进一步分析了不同Al组分的Ga1-xAlxAs材料以及不同的掺杂浓度对制冷效果的影响,为该领域的实验工作提供了极有价值的参考.
The thermal radiation of GaAsGa1-xAlxAs semiconductor quantum wells was analyzed numerically by numerical method. Based on the drift diffusion model, the internal continuity of the semiconductor under forward bias was calculated by the current continuity equation and the Poisson’s equation , And based on which the luminescent recombination and Auger recombination of the carriers in the well were calculated to determine the optimal conditions for thermoelectric cooling of the semiconductor heterostructure quantum well photoradiation.Further analysis of the different The influence of Al composition Ga1-xAlxAs material and different doping concentration on the refrigeration effect provides a valuable reference for the experimental work in this field.