Arc deposition, a widely used surface coating technique, has disadvantages such aslarge droplet size and high deposition temperature. Recent trend in its renovation isthe introduction of pulsed bias at the substrate. The present paper attempts to describethe deposition process of TiN films using this technique with emphasis laid on theunderstanding of the basic problems such as discharge plasma properties, temperaturecalculation, and droplet size reduction. We show that this technique improves thefilm microstructure and quality, lowers deposition temperature, and allows coatingson insulating substrates. After analyzing load current oscillation behaviors, we havedetermined that the plasma load is of capacitance nature due to plasma sheath and thatit is equivalent to a circuit element consisting of parallel capacitance and resistance.At last, we point out the remaining problems and future development of the pulsed-biasarc deposition technique.