在宽禁带(wide band-gap)半导体的Si C器件中,为实现1.3k V以上的高耐压,双极性器件被认为是有利的。富士电机公司对模拟的预测与实测结果之差异进行分析,通过反复修改参数,进一步提高了预测精度。实施了耐压特性模拟、顺向特性模拟和开关特性模拟,然后在参数中反映出测量的物理性能值,并考虑到界面电荷和寄生阻抗,结果可以高精度的再现实际器件的特性。 Bipolar devices are considered to be advantageous in high band-gap semiconductor Si C devices to achieve high withstand voltages of 1.3 kV or higher. Fuji Electric Co., Ltd. analyzed the differences between the simulated and measured results, and further improved the prediction accuracy by repeatedly modifying the parameters. The withstand voltage characteristic simulation, forward characteristic simulation and switching characteristic simulation were carried out, and then the measured physical property values ​​were reflected in the parameters, taking into account the interfacial charges and parasitic impedances. As a result, the actual device characteristics can be reproduced with high accuracy.