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分别利用Ga2O3粉末和Ga2O3凝胶作为Ga源,采用NH3为N源,在950℃下,分别将两种反应物与流动的NH3反应20 min合成了GaN微晶。用X射线衍射(XRD)、扫描电子显微镜(SEM)、选择区电子衍射(SAED)对微晶进行结构、形貌的分析,特别是对两种不同途径合成GaN微晶的XRD进行了分析比较。结果表明,当Ga源温度为950℃时两种不同的合成途径均可得到六方纤锌矿结构的GaN单晶颗粒,在氮化温度为850℃和900℃时,利用Ga2O3粉末作为Ga源,仅有少量的Ga2O3转变为GaN;而采用Ga2O3凝胶作为Ga源,在相同的温度下,大部分凝胶经过高温氨化反应均可转化为GaN。
The GaN microcrystals were synthesized by reacting Ga2O3 powder and Ga2O3 gel as Ga source and NH3 as N source respectively at 950 ℃ for 20 min with flowing NH3. The structure and morphology of the crystallites were analyzed by X-ray diffraction (XRD), scanning electron microscopy (SEM) and selective area electron diffraction (SAED). In particular, the XRD patterns of the two different synthesized GaN crystallites were analyzed and compared . The results show that GaN single crystal particles with hexagonal wurtzite structure can be obtained by two different synthesis routes when the Ga source temperature is 950 ℃. When the nitridation temperature is 850 ℃ and 900 ℃, Ga2O3 powder is used as Ga source, Only a small amount of Ga2O3 is converted to GaN. Ga2O3 gel is used as Ga source. At the same temperature, most of the gels can be transformed to GaN by high temperature ammoniation.