发射极载流子增强技术作为绝缘栅双极型晶体管(IGBT)器件所特有的技术手段,是进一步改善IGBT导通饱和压降和关断损耗折中性能的关键所在。在经历了20多年的发展之后,发射极载流子浓度增强的技术无论从结构和性能上都得到了巨大的提升。概述了IGBT载流子增强技术的发展过程,针对IGBT中的载流子分布,分析了载流子增强技术的物理机制,介绍了传统载流子增强技术所采用的器件结构及实现方法,包括注入增强型绝缘栅双极型晶体管(IEGT),载流子存储层结构的沟槽型双极型晶体管(CSTBT),高导电率IGBT(Hi GT),平面增强结构IGBT,以及最近几年较新型的介质阻挡层IGBT,局部窄台面IGBT,p型埋层CSTBT等。着重讨论了每种器件的结构特点以及性能上的改善。载流子增强技术将是新一代IGBT器件设计的一个主要技术手段。 Emitter carrier enhancement technology as insulated gate bipolar transistor (IGBT) device-specific technical means, is to further improve the IGBT turn-on saturation voltage drop and turn-off loss trade-off performance of the key. After more than 20 years of development, the technology of enhancing the emitter carrier concentration has been greatly improved both in structure and performance. The development of IGBT carrier enhancement technology is introduced. The physical mechanism of carrier enhancement technology is analyzed according to the carrier distribution in IGBT. The device structure and implementation method of traditional carrier enhancement technology are introduced, including (IEGT), trench-type bipolar transistor (CSTBT) with carrier storage layer structure, Hi GT, planar enhanced structure IGBT, and more recent years A new type of dielectric barrier IGBT, local narrow table IGBT, p-type buried CSTBT and so on. Emphasis is placed on the structural features and performance improvements of each device. Carrier enhancement technology will be a new generation of IGBT device design a major technical means.