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随着器件尺寸的缩小,阻变存储器(RRAM)具有取代现有主流Flash存储器成为下一代新型存储器的潜力。但对RRAM器件电阻转变机制的研究在认识上依然存在很大的分歧,直接制约了RRAM的研发与应用。通过介绍阻变存储器的基本工作原理、不同的阻变机制以及基于阻变存储器所表现出的不同I-V特性,研究了器件的阻变特性;详细分析了阻变存储器的五种阻变物理机制,即导电细丝(filament)、空间电荷限制电流效应(SCLC)、缺陷能级的电荷俘获和释放、肖特基发射效应(Schottky emission)以及普尔-法兰克效应(Pool-Frenkel);同时,对RRAM器件的研究发展趋势以及面临的挑战进行了展望。
As device sizes shrink, resistive variable memory (RRAM) has the potential to replace existing mainstream flash memory as the next generation of new memory. However, there is still a great deal of disagreement on the mechanism of resistance transformation of RRAM devices, which directly restricts the development and application of RRAM. By introducing the basic working principle of resistive-switching memory, different resistive-switching mechanisms and different IV characteristics based on resistive-switching memory, the resistive-switching characteristics of the device are studied. Five resistive-switching physical mechanisms of resistive-switching memory are analyzed in detail. That is, the conductive charge-induced current effect (SCLC), the charge trapping and releasing of the defect level, the Schottky emission and the Pool-Frenkel effect of the conductive filaments. At the same time, The research trend of the devices and the challenges they face are prospected.