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使用分子动力学方法,模拟研究了单晶Cu(001)薄膜在双向等轴拉伸应变下的塑性变形行为.当应变超过一定值时,样品通过产生位错、层错及孪晶而发生塑性变形.当应变相对较低时,不全位错首先在薄膜表面形核并在密排面上滑移,留下堆积层错;当应变增加时,位错在表面与内部同时成核生长,层错数量也随之增加.分析了相邻滑移面上的位错之间相互作用形成孪晶的微观过程.材料内部形成大量堆积层错及孪晶后,较大孪晶的密排面上的原子也会发生滑移,形成孪晶内部的层错结构以释放残余应力.
Molecular dynamics simulation was used to simulate the plastic deformation behaviors of single-crystal Cu (001) films under biaxial tensile strain. When the strain exceeded a certain value, the samples were plasticized by dislocations, stacking faults and twins When the strain is relatively low, the incomplete dislocations first nucleate on the surface of the film and slide on the dense surface, leaving a stacking fault; when the strain increases, the dislocations nucleate and grow at the same time on the surface and the interior, and the layer The number of errors also increases.The microscopic process of the formation of twins by the interaction of dislocations on adjacent slip surfaces is analyzed.The formation of twin in the material after the formation of a large number of stacking faults and twins, Of the atoms will slip, the formation of twin internal layer structure to release residual stress.