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我校固体电子学系特种陶瓷薄膜科研组,用溶胶-凝胶(Sol-gel)方法,在SrTiO_3,MgO单晶基片上制备出钙钛矿型结构的(Pb_(1-x)La_x)_(1-x)/4O_3(简称PLT)和BaTiO_3(简称BT)外延生长薄膜。它们是(100)PLT∥(100)SrTiO_3,(100)PLT∥(100)(MgO)和(110)BT∥(110)SrTiO_3,(100)BT∥(100)MgO。在Si单晶和石英玻璃基片上制备出钙钛矿型结构的多晶薄膜。用Sol-gel方法制备PLT外延及陶瓷薄膜和BT外延生长薄膜,现国内外尚未见报道。
Department of Solid State Electronics, Department of Solid State Electronics special ceramic thin film research group, by sol-gel method, SrTiO_3, MgO single crystal substrate prepared perovskite structure (Pb_ (1-x) La_x) _ (1-x) / 4O_3 (referred to as PLT) and BaTiO_3 (referred to as BT) epitaxial growth film. They are (100) PLT // (100) SrTiO_3, (100) PLT // (100) (MgO) and (110) BT // (110) SrTiO_3 and (100) BT // (100) MgO. A polycrystalline perovskite-type polycrystalline thin film was prepared on Si single crystal and quartz glass substrates. Preparation of PLT epitaxial and ceramic thin films and BT epitaxial thin films by Sol-gel method has not been reported at home and abroad.