据《Solid State Technology》1991年12月报道,IEEE 1991年亚微米光刻技术讨论会在美国夏威夷举行。会议讨论了1997～2000年制造256Mbit和1 Gbit DRAM所需要的光刻技术。256Mbit和1 Gbit DRAM要求光刻特征线宽的尺寸为0.25μm和0.15μm。会议预测了X射线、电子束光刻和光学光刻技术作为实现上述要求的前景,还提出了精密尺寸测量的计量和缺陷检查等问题。 According to “Solid State Technology” in December 1991 reported that IEEE 1991 sub-micron lithography seminar held in Hawaii, USA. The meeting discussed the lithography techniques required to make 256Mbit and 1Gbit DRAM from 1997 to 2000. 256Mbit and 1Gbit DRAM require lithographic feature line widths of 0.25μm and 0.15μm. The meeting forecasted the prospect of X-ray, electron beam lithography and optical lithography as the realization of the above requirements, and also put forward the measurement and defect inspection of precision dimension measurement.