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采用二步合成法制备了掺杂z%Sb_2O_3的Pb(Zn_(1/3)Nb_(2/3))_0.20(Zr_(0.50)Ti_(0.50))_(0.80)O_3-0.5%MnO_2(PZNTM)压电陶瓷(Sb_2O_3的质量分数为z=0、0.1、0.3、0.5、 0.7、0.9).探讨了不同剂量Sb_2O_3掺杂对陶瓷试样的相结构和机电性能的影响.结果表明,在1 150 ℃下烧结3 h,得到处在准同型相界附近的纯钙钛矿结构的陶瓷;随着Sb_2O_3掺杂量的增加,试样的压电常数d_(33)和机电耦合系数k_p先增大后减小,而介电损耗tan δ持续上升,机械品质因数Q_m则持续下降.当z＝0.3时,压电陶瓷的性能得到优化,d_(33)和k_p均达到最大值,分别为302 pC/N和0.60,而tan δ较小、Q_m较大,分别为0.006和880.“,”Pb(Zn_(1/3)Nb_(2/3))_0.20(Zr_(0.50)Ti_(0.50))_(0.80)O_3-0.5%MnO_2(PZNTM) piezoelectric ceramics doped with z%Sb_2O_3 (mass contents z=0, 0.1, 0.3, 0.5, 0.7, 0.9) were prepared by the two step synthetic method. The effect of different doped mass contents of Sb_2O_3 on the crystallographic phase and electromechanical properties have been studied. The results showed that the pure perovskite structure was obtained at sintering temperature of 1 150 ℃ for 3 h, and is nearly by the morphotropic phase boundary (MPB). With the increasing of Sb_2O_3 content, the piezoelectric constant d_(33) and electromechanical coupling factor k_p increased, then decreased,moreover, the dielectric loss tan δ increased and the mechanical quality factor Q_m decreased. When z is 0.3, the largest d_(33) and k_p are 302 pC/N and 0.60, respectively, and the tan δ and Q_m are 0.006 and 880, respectively.