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本文对不同Zr/Ti掺Bi改性PZT热释电材料的F_(RL)-F_(RH)相变特性进行了研究。根据PZT二元系相图和F_(RL)、F_(RH)相材料的结构,结合实验,阐述了F_(RL)-F_(RH)相变时,热释电系数有较大增加,而介电常数和介质损耗基本不变,这样材料优值因子即有较大程度的提高。因此PZT红外探测器的工作温度处于F_(RL)-F_(RH)相变温度附近时,探测灵敏度亦会有较大的提高。文中列出了4种配方制备的PZT材料的实验结果,与室温时相比,相变时电压优值因子提高30倍,比探测率优值因子提高25倍。
In this paper, the F_ (RL) -F_ (RH) phase transition behavior of different Zr / Ti doped Bi-modified PZT pyroelectric materials was studied. According to the phase diagram of PZT binary system and the structures of F_ (RL) and F_ (RH) phase materials, the pyroelectric coefficient of F_ (RL) -F_ (RH) Dielectric constant and dielectric loss basically unchanged, so that material value factor that is a greater degree of improvement. Therefore, PZT infrared detector operating temperature at F_ (RL) -F_ (RH) phase transition temperature near the detection sensitivity will be greatly improved. In this paper, the experimental results of PZT materials prepared by four kinds of formulations are listed. Compared with room temperature, the merit factor of voltage is 30 times higher than that of room temperature, which is 25 times higher than that of PZT.