照相制版是半导体平面工艺的重要组成部分,光刻掩膜的质量直接影响半导体器件的性能和成品率。随着器件的发展,对光刻掩膜的精度要求也越来越高。目前,在半导体掩膜制作中,为了拍摄微小而又十分精密的图形,超微粒干版是普遍采用的较为理想的感光干版。我们在制版工作中,准备使用一台动态曝光的激光分步重复精缩机。该设备因曝光光源的光强和曝光时间所限,要求感光版应有很高的 Photolithography is an important part of semiconductor planar processes. The quality of photolithographic masks directly affects the performance and yield of semiconductor devices. With the development of the device, the precision of the lithography mask is also getting higher and higher. At present, in the semiconductor mask production, in order to shoot small but very sophisticated graphics, the ultra-fine dry version is generally used in the ideal dry version of the photosensitive. We are in the platemaking, ready to use a dynamic exposure of the laser stepper repeat compressor. The exposure of the device due to light intensity and exposure time is limited, the photosensitive version of the request should be high