论文部分内容阅读
镍铬合金是制造薄膜电阻的常用材料。这种电阻材料虽然电阻率高、高温性能稳定,但正温度系数较大(约2×10~(-4)/℃),不能用作温度系数低的精密电阻。如果在镍铬材料中加入4～10％(重量比)的硅,采用真空蒸发可以制成电阻温度系数很小的镍铬硅系薄膜电阻器。在同一蒸发温度下,镍铬硅这三种成分的蒸汽压相差较大易出现分馏现象,影响到膜层的均匀性以及电阻性能,所以真空淀积条件要严加控制。通常在1600℃蒸发时组元的
Nickel-chromium alloy is commonly used to manufacture thin film resistors. Although the resistive material has high resistivity and high temperature stability, it has a large positive temperature coefficient (about 2 × 10 -4 / ° C) and can not be used as a precision resistor with a low temperature coefficient. If the nickel-chromium material by adding 4 to 10% (by weight) of silicon, the use of vacuum evaporation can be made of a small temperature coefficient of resistance of the Ni-Cr-Si thin film resistors. Under the same evaporation temperature, the vapor pressure of the three components of Ni-Cr-Si is prone to fractionation, which affects the uniformity and resistivity of the coating, so the vacuum deposition conditions should be strictly controlled. The components are usually evaporated at 1600 ° C