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通过利用控制衬底和源的温度的真空蒸发工艺,在云母衬底上沉积InAs薄膜已经实现了。这种大晶粒薄膜被发现具有最佳的电学性能。在施主浓度3.5X10~(16)厘米~(-3)和厚度3μm的未掺杂薄膜中,获得了室温下的最大电子迁移率为12400厘米~2/·秒。这些InAs薄膜的电子迁移率和电阻率的温度依赖性稍低于已报道的InAs体晶体。
By using a vacuum evaporation process that controls the temperature of the substrate and the source, deposition of an InAs film on a mica substrate has been achieved. This large grain film was found to have the best electrical properties. The maximum electron mobility at room temperature was 12,400 cm-2 / · sec in undoped films with a donor concentration of 3.5 × 10 ~ (16) cm ~ (-3) and a thickness of 3μm. The temperature dependency of the electron mobility and the resistivity of these InAs films is slightly lower than that of the reported InAs bulk crystal.