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多晶硅的制造工艺日趋成熟,成本不断降低,在太阳能电池的制造中应用越来越广泛;激光加工技术效率高、消耗低,在太阳能电池制造领域起着举足轻重的作用。为了探究激光参数对多晶硅加工效果的影响,在正交试验方法的基础上,运用激光在多晶硅片表面进行单点多脉冲打孔的实验方法,通过光学显微镜和三维形貌仪等设备对实验结果进行观察分析,建立了工艺参数与激光钻孔实验结果的关系,并优化了激光冲击多晶硅片的参数,分析了孔周围的热影响区。由实验得到以下参数:激光波长为532 nm,能量120 mJ,光斑直径0.5 mm,作用时间45 s时,在该条件下可得到最佳的孔径。
The manufacturing process of polycrystalline silicon is maturing and its cost is declining. It is more and more widely used in the manufacture of solar cells. Laser processing technology has the advantages of high efficiency and low consumption and plays a decisive role in the field of solar cell manufacturing. In order to explore the influence of laser parameters on the processing efficiency of polycrystalline silicon, the experiment method of single point multi-pulse drilling on the surface of polycrystalline silicon wafer by laser was established based on the orthogonal test method. The results of optical microscope and three- The relationship between process parameters and laser drilling experiment results was established. The parameters of laser impact polysilicon wafer were optimized, and the heat affected zone around the hole was analyzed. The following parameters were obtained experimentally: The optimum aperture was obtained under the conditions of laser wavelength of 532 nm, energy of 120 mJ, spot diameter of 0.5 mm and action time of 45 s.