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为了满足红外激光测试技术对多光谱集成光源在光谱范围和峰值精度等方面的要求,提出了一种高精度的多波长红外激光二极管,并设计了能够集成860 nm,905 nm和1064 nm(脉冲/单模)四种激光芯片的封装结构.建立了基于上述封装结构下中心热沉的温度场分布模型,并根据数学建模工具求解的中心热沉温度场数值分布规范了中心热沉的加工工艺.为了验证多波长激光二极管中心热沉对输出峰值光谱热漂移现象的抑制效果,制备了多波长激光二极管样机,并搭建了观察其峰值光谱热漂移现象的实验装置.实验结果显示,样机仅有两种芯片的峰值光谱发生了1—3 nm的微弱漂移,并未超出规定的峰值半宽.该现象证明了多波长激光二极管的输出光谱具备较高的精度和良好的稳定性.
In order to meet the requirements of infrared laser testing technology in spectral range and peak accuracy, a multi-wavelength infrared laser diode with high precision is proposed. The laser diode with 860 nm, 905 nm and 1064 nm / Single mode), and the temperature field distribution model of the central heat sink based on the above package structure is established, and the central heat sink temperature distribution is regulated according to the numerical distribution of the central heat sink temperature field solved by the mathematical modeling tool In order to verify the suppression effect of the multi-wavelength laser diode central heat sink on the output peak spectral thermal drift, a multi-wavelength laser diode prototype was prepared and an experimental device for observing the peak spectral thermal drift was established.The experimental results show that the prototype A slight shift of 1-3 nm in the peak spectra of the two chips did not exceed the specified half-width of the peak, which proves the high precision and good stability of the output spectrum of the multi-wavelength laser diode.