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本文报道了150光敏元表面n沟CCD(电荷耦合器件)在不同能量电子和γ射线辐照后的电离辐射效应。试验结果表明,转移失效率在≤10Gy时已明显增大。但大多数器件在累积剂量≤50Gy时,通过调整“胖零”注入仍可工作。在高剂量辐照期间,不同栅偏压器件的转移效率退化存在较大差异。应用高频和准静态C-V技术分析了参数退化的原因。
This paper reports the ionizing radiation effects of n-channel CCD (Charge Coupled Device) on the surface of 150 photosensitive cells under different energy electron and γ-ray irradiation. The test results show that the transfer failure rate has been significantly increased in ≤ 10Gy. However, most devices will still work by adjusting “fat zero” injection when the cumulative dose is ≤50 Gy. During high dose irradiation, there is a large difference in the degradation of transfer efficiency between different gate bias devices. The causes of parameter degradation were analyzed using high-frequency and quasi-static C-V techniques.