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本文根据“带尾效应”和异质结理论得到了硅npn型平面超高频晶体管的H_(FE)∞exp(-△E_g/kT).分析和测试表明“带尾效应”引起的发射区材料和基区材料的能隙(禁带)差上△E_g是影响该类晶体管温度特性的主要因素.但是实验得到的△E_g较用发射区表面浓度或用发射区平均浓度得到的△E_g都要小.本文认为这是因为exp(-△E_g/kT)中的△E_g应是“有效能隙势垒”,而“有效能隙势垒”不仅与发射区材料和基区材料的能隙差有关,而更重要的是与能隙的坡度有关.对所谓的“同质结”晶体管实际上就是与发射结附近的杂质浓度梯度有关.
In this paper, we obtain the H_ (FE) ∞exp (- △ E_g / kT) of silicon npn planar UHF transistors based on the “tail-end effect” and the heterojunction theory.The analysis and testing show that the emitter region △ E_g is the main factor affecting the temperature characteristics of the transistors, but △ E_g obtained by experiment is higher than △ E_g, which is obtained by using the surface concentration of the emitting region or the average concentration of the emitting region Should be small.This paper argues that because ΔE_g in exp (- △ E_g / kT) should be an “effective energy barrier”, and “effective energy barrier” not only with the energy gap of the emitter region and the base region Poor, and more importantly, the slope of the energy gap.The so-called “homo-junction” transistor is actually related to the impurity concentration gradient near the emitter junction.