论文部分内容阅读
用横断面透射电子显微术（ＴＥＭ）研究了用键合方法获得的ＳＯＩ材料的界面结构。绝缘层二氧化硅和硅膜的厚度非常均匀，Ｓｉ膜／ＳｉＯ２以及ＳｉＯ２／Ｓｉ基体的界面平直且结合紧密，在界面上没有观察到缺陷和孔洞。
The interface structure of the SOI material obtained by the bonding method was investigated by cross-sectional transmission electron microscopy (TEM). The thicknesses of the insulating layers of silicon dioxide and silicon are very uniform, and the interface between the Si film / SiO2 and the SiO2 / Si substrate is flat and closely bonded, and no defects and voids are observed at the interface.