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设计并制备了980 nm高量子效率和极低光损耗的激光二极管(LD)外延材料和器件。微通道封装1 cm激光二极管阵列在连续(CW)工作条件下最大电光效率达到60.0%,相应的斜率效率和输出光功率分别为1.1 W/A和38.2 W。测试得到外延材料的内损耗系数和内量子效率分别为0.58 cm-1和91.6%。测试分析表明,器件电光效率的提高主要在于新型的InGaAs/GaAsP应变补偿量子阱和大光腔结构设计。
The laser diode (LD) epitaxial materials and devices with 980 nm high quantum efficiency and very low optical loss were designed and fabricated. The maximum electro-optic efficiency of microchannel encapsulated 1-cm laser diode array reaches 60.0% under continuous (CW) working conditions, and the corresponding slope efficiency and output optical power are 1.1 W / A and 38.2 W, respectively. The internal loss coefficient and internal quantum efficiency of the epitaxial material were 0.58 cm-1 and 91.6% respectively. Test analysis shows that the improvement of the electro-optic efficiency of the device mainly lies in the design of a novel InGaAs / GaAsP strain compensation quantum well and a large cavity structure.