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对超额Ba激活的Ag BaO复合薄膜在外加垂直表面电场作用下的光学吸收特性进行了测量 .结果显示 ,薄膜在可见—近红外光波段存在两个吸收峰 ,其中近红外光区的吸收峰强度随垂直表面电场的作用而降低 .理论分析表明 ,可见光区的主吸收峰源于埋藏在BaO半导体中的Ag超微粒子的表面等离激元共振吸收 ;近红外光区的次吸收峰则由BaO半导体基质中杂质能级的光吸收引起 ,杂质能级的产生与超额Ba在BaO晶体中造成的氧缺位有关 .在外加垂直表面电场作用下 ,BaO基质中的杂质发生电离 ,并导致杂质能级上束缚电子浓度减小 ,表现为薄膜在与杂质吸收相对应的光子能量范围内的光吸收随电场强度的增加而降低
The optical absorption properties of Ag BaO composite thin film activated by excess Ba under the applied vertical electric field were measured. The results showed that there were two absorption peaks in the visible-near-infrared light band, and the absorption peak intensity The theoretical analysis shows that the main absorption peak in the visible region is due to the surface plasmon resonance absorption of the Ag ultrafine particles buried in the BaO semiconductor and the sub-absorption peak in the near-infrared region is composed of BaO Due to the light absorption of the impurity level in the semiconductor matrix, the generation of impurity levels is related to the oxygen vacancies caused by excess Ba in the BaO crystal.The impurities in the BaO matrix ionize under the application of the vertical surface electric field and lead to impurity energy The reduction of the bound electron concentration at the stage shows that the light absorption of the film in the photon energy range corresponding to the impurity absorption decreases as the electric field strength increases