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提出了基于AlN压电薄膜多层结构的1.8 GHz射频薄膜体声波谐振器(FBAR),并进行了研究。采用修正后的MBVD等效电路模型对器件的谐振特性进行了分析和模拟。给出了采用半导体加工工艺制备器件的工艺流程,并实际制做谐振器样品,样品的测试结果:器件的串联谐振频率fs和并联谐振频率fp分别为1.781和1.794 GHz,相应的有效机电耦合系数为1.8%;串联谐振频率处和并联谐振频率处的Q值分别为308和246。该谐振器样品实际尺寸为0.45 mm×0.21 mm×0.5 mm,可以用来制备高性能的滤波器、双工器和低相噪射频振荡器等。
A 1.8 GHz RF thin film bulk acoustic resonator (FBAR) based on AlN piezoelectric thin film multilayer structure is proposed and studied. The modified MBVD equivalent circuit model is used to analyze and simulate the resonant characteristics of the device. The process flow of fabricating the device by using semiconductor processing technology is given and the resonator sample is actually made. The test results of the sample show that the series resonant frequency fs and the parallel resonant frequency fp of the device are 1.781 and 1.794 GHz, respectively, and the corresponding effective electromechanical coupling coefficient Is 1.8%; the Q values at the series resonance frequency and the parallel resonance frequency are 308 and 246, respectively. The actual size of the resonator sample 0.45 mm × 0.21 mm × 0.5 mm, can be used to prepare high-performance filters, duplexers and low-phase noise RF oscillator.