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本文以C4D的离子注入势阱为例,详细描述了栅沟道注入与表面势的关系,给出了分析表达式。并且用瞬态和常规C-V特性测量,对理论结果进行了间接的验证。方法同样适用于具有离子注入势垒区的标准C4D和CC-RAM;而对MOS的阈值调整也有参考意义。
Taking C4D ion implantation potential well as an example, the relationship between gate channel injection and surface potential is described in detail in this paper. The analytical expression is also given. And transient and conventional C-V characteristics of the measured results of indirect verification. The method is also applicable to the standard C4D and CC-RAM with the ion implantation barrier region, and also has a reference meaning for the threshold adjustment of the MOS.