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1971年西德IBM公司及荷兰Philips公司提出的注入逻辑单元,以其结构简单,无需隔离,功率消耗低使实现双极大规模集成有了新的前景。其基本单元的结构如图1所示。由P_1注入N区的空穴有相当的部分被P_2和P_3所收集,被P_2或P_3所收集的空穴或者经过欧姆接触(A点)变为外电路电流;或者在P_2或P_3区内积累。在P_2或P_3区内,因为空穴的积累,其电位升高,到达一定程度后N区便向P_2或P_3区发射电子。进入P_2或P_3的电子一部分和在该区内积累的空穴复合。
In 1971, the injection logic cells proposed by West Germany IBM and Philips of the Netherlands provided a new prospect for the realization of bipolar large-scale integration due to its simple structure, no isolation and low power consumption. The basic unit structure shown in Figure 1. A considerable part of the holes injected into the N region by P_1 are collected by P_2 and P_3, and the holes collected by P_2 or P_3 turn into the external circuit current through the ohmic contact (A point) or accumulate in the P_2 or P_3 region . In the P_2 or P_3 region, because of the accumulation of holes, its potential increases, to a certain extent, the N region will emit electrons to the P_2 or P_3 region. Part of the electrons entering P_2 or P_3 recombine with the holes accumulated in this region.