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在经清洗后的硅(111)衬底上,分别采用电泳过程中氧化制备CuO薄膜和电泳制备Cu膜后退火氧化制备CuO薄膜。用XRD和SEM对薄膜样品进行了组分、表面形貌等微观结构的分析,发现两种方法制备的CuO薄膜的组分基本一致,但形貌完全不同,前者是由非常均匀的CuO小颗粒(200nm)相连而成团簇状,后者是由一些大小均匀的半径约为200nm的CuO小颗粒和气孔相互交融紧密连接而成的条状或块状。电泳过程中氧化制备的CuO薄膜结晶质量较好。
CuO thin films were prepared on the cleaned silicon (111) substrates by oxidative oxidation in the course of electrophoresis and Cu films were prepared by electrophoresis. The microstructure of the films were characterized by XRD and SEM. The results showed that the compositions of CuO films prepared by the two methods were basically the same, but the morphologies were completely different. The former was composed of very uniform CuO particles (200nm) connected to form a cluster, the latter is by some uniform size of about 200nm in diameter CuO small particles and stomatal closely integrated with each other into a strip or block. The quality of CuO films prepared by oxidation during the electrophoresis is better.