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本文给出了使用Ｇｅｍｉｎｉ－１型外延炉生产硅外延片时，实现外延层掺杂浓度多层分布的程序。
实现多层外延结构的程序设计
【摘 要】
：
本文给出了使用Ｇｅｍｉｎｉ－１型外延炉生产硅外延片时，实现外延层掺杂浓度多层分布的程序。
【机 构】
：
国营八二三三厂,通江晶体管厂
【出 处】
：
黑龙江电子技术
【发表日期】
：
1996年1期
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